The

study was done using musts obtained from two Birinapant in vivo red grape varieties (Bonarda and Tempranillo) artificially contaminated with two OTA levels. A duplicate set of tanks of 100 1 each was established for each must (Bonarda and Tempranillo). The fermentations were initiated by inoculation of two Saccharomyces spp. strains having different fermentation performance. The must from the Tempranillo variety was spiked with 6 mu g/l of OTA while that from the Sonarda variety with 0.3 mu g/l of the toxin. Samples were collected at different stages of the process. Performance of the alcoholic and malolactic fermentations was monitored. Titratable and volatile check details acidity, pH, ethanol, sugar and SO(2) Concentrations were determined following standard methods proposed by the Office International de la Vigne et du Vin (OIV). OTA analysis was done by HPLC. Detection and quantification limits were 0.01 and 0.1 ng/ml, respectively. The OTA levels during the vinification trials dropped to an average of about 86.5%. The type of Saccharomyces strains used showed no effect on toxin reduction.”
“We

report the fabrication of pentacene organic field-effect transistors (OFETs) using a fluorinated styrene-alt-maleic anhydride copolymer gate dielectric, which was prepared from styrene derivatives with a fluorinated side chain [-CH(2)-O-(CH(2))(2)-(CF(2))(5)CF(3)] and maleic anhydride through a solution polymerization technique. The fluorinated side chain was used to impart hydrophobicity to the surface of the gate dielectric and maleic anhydride was employed to improve its wetting properties.

A field-effect mobility of 0.12 cm(2)/Vs was obtained from the as-prepared top-contact pentacene FETs. Since various functional groups can be introduced into the copolymer due to the nature of maleic anhydride, Selleckchem JNK inhibitor its physical properties can be manipulated easily. Using this type of copolymer, the performance of organic FETs can be enhanced through optimization of the interfacial properties between the gate dielectric and organic semiconductor.”
“This work investigated the mechanical and electrical properties of NiO-SDC/SDC anode sintered by two different methods: in a microwave at about 1200 degrees C for 1 h and in a conventional furnace at 1200 degrees C with a holding time of 1 h (total sintering time of 21 h). Nano-powders SM0.2Ce0.8O1.9 (SDC) and NiO were mixed using a high-energy ball mill, followed by the co-pressing technique at a compaction pressure of 400 MPa. No binder was used between the layers. The electrical behaviors of all sintered samples were studied using electrochemical impedance spectra in the frequency range of 0.01-10(5) Hz under 97% H-2-3% H2O, an amplitude of 10 mV, and at high temperature range of 600-800 degrees C.