Competing interests The authors declare that they have no competing interests. Authors’ contributions AMH and IA conceived the study, provided the microbial strains, and drafted the manuscript together with AMG and MCC. AMG, AF and MM performed the synthesis and characterization of nanofluid. AMG obtained the essential oil. AMH and AGA performed the biological analyses. EA and VL participated in the design of the study and coordination. All authors read and approved the final manuscript.”
“Background Porous anodic aluminum oxide (PAAO) is an amorphous type of aluminum oxide, Al2O3, which is produced via anodic oxidation of aluminum in acidic electrolytes such as sulfuric, phosphoric, and oxalic

acid [1]. This Selleckchem MLN2238 nanoporous material is often used as the deposition template for fabricating one-dimensional nanostructured selleck chemicals materials because it offers self-organized arrays of the pores in the nanoregion. The geometric coefficients of the pores such as pore size and aspect ratio can be altered over vast areas by varying the anodizing parameters. Therefore, it is possible to produce uniform one-dimensional nanomaterials with different size and aspect ratio by using these templates. Moreover, they offer the advantage of possible in situ annealing of the grown nanomaterial because of the EX527 thermal stability

of aluminum oxide. PAAO films have other useful properties such as optical transparency over a wide spectral

range and having low cost. All the Al2O3 polymorphs are known as wide-band gap dielectric materials with large band gaps of 7 to 9 eV [2]. Recently, we calculated the band gap of γ-Al2O3 compound in close agreement with experimental data [3]. The calculations were performed in the framework of the density functional theory as embodied in the reliable WIEN2k code [4] using the modified Becke-Johnson (mBJ) exchange potential [5] by optimizing the c factor of the mBJ method. Large band gaps are assumed for different PAAO layers because the crystal structure of amorphous Al2O3 is close to the surface structure of γ-Al2O3 polymorph at room temperature [6]. Thus, very low efficiency Interleukin-2 receptor of free carrier photogeneration could be attributed to PAAO at room temperature. However, an interesting semiconductor behavior is observed in the barrier layer of PAAO layers which are formed in the phosphoric acid electrolyte [7–10]. As we expect, PAAO materials are insulators at room temperature, but the experimental results show that they have semiconductor behavior. This is just for existence of subband levels in the electronic structure of PAAO layers that enable carrier photogeneration at room temperature. Here, the PL properties of PAAO films formed in phosphoric acid are investigated under different anodizing conditions in order to identify the subband levels in these materials.